近日一名微博博主發佈微博傳播
#華爲韜定律芯片實測# 忘了發微博了,補一下。
V2 新的論文信息還是挺多的,解釋了幾個之前不太明確的點。
1⃣首先,散熱:
高功耗電路不參與摺疊,避免高功耗模塊在垂直方向上疊在一起。
Thermal management remains the critical challenge in the LogicFolding architecture. To address this, we employ a thermal-aware partitioning and floorplanning strategies. During the design phase, we deliberately **oid folding high-power circuits and structurally prevent the spatial adjacency of high-power subsystems.
佈局層面避免摺疊高功耗電路,以及結構上阻止高功耗子系統的空間相鄰,說明散熱的問題必然會考慮。
2⃣其次,性能:
在保持麒麟9030 Pro同樣的性能水平前提下,把電壓從1.1V降到0.9V,測出功耗降低41%、功率密度降低5.6%,那麼理論上,同功耗也就會有更高的性能。
3⃣第三,gear ratio
V2專門解釋了爲什麼 gear ratio 接近1是質變節點。
As the vertical interconnect pitch approaches the dimensions of the top metal layer, the nature of the optimization objective undergoes a fundamental transformation. Historically, when the vertical interconnect pitch is much sparser than the top metal pitch, the design space is fundamentally restricted to a discrete optimization problem. Designers manually defined partition boundaries at the macro level, assigning entire functional blocks to specific dies... LogicFolding proposed here is positioned as a continuous optimization problem, in which fine-grained vertical integration enables the design space to be explored at a level of resolution much higher than that of functional blocks, opening the door to globally coordinated optimization of circuits across the vertical dimension.
說的簡單點,那就是從離散優化(模塊級,誰的模塊放哪層)變成連續優化(單元級,每個邏輯門單獨決定放哪層)。
4⃣最後:LogicFolding vs Sequential 3D
這也是直接回應「華爲的方案到底是不是真3D」的部分。
It is worth noting that while sequential 3D integration theoretically offers the ultimate fine-grained device or standard-cell granularity by fabricating device layers sequentially, it currently faces significant manufacturing bottlenecks. Most critically, the lower-layer devices are highly prone to performance degradation due to the strict thermal budget constraints inherent in the sequential fabrication process. As a commercially viable realization, LogicFolding achieves the necessary low gear ratio for continuous optimization by utilizing mature, advanced wafer-to-wafer hybrid bonding.
也就是說華爲選擇的不是理論上粒度最細的路線(Sequential 3D),而是在熱穩定性和粒度精細度之間做了工程權衡,用成熟的W2W HB技術去逼近Sequential 3D的效果。真3D這個詞本身在學術上也有更細的分類,華爲是比較務實的路線。
Figure 3(b) 直接給出了麒麟2026鍵合界面的實拍截面圖,可信度還是非常高的。
麒麟2026和麒麟2027均已完成流片,等新手機就好了。
曝華爲Mate90正在芯片裝測
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